| 1. | The mobility value used is that of the minority carrier .
所采用的迁移率值都是少子迁移率。 |
| 2. | Equilibrium majority minority carriers
平衡多数少数载流子 |
| 3. | Measurement of minority carrier life time in germanium by photoconductive decay method
用光电导衰减法测定锗中少数载流子寿命 |
| 4. | Study on the computer - aided measurement of minority carrier generation lifetime and its application
少子产生寿命计算机辅助测量及应用的研究 |
| 5. | Pertaining to a semiconductor device in which both majority and minority carriers are present
用于修饰或说明其中既有多数载流子又有少数载流子的半导体器件。 |
| 6. | Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay
硅和锗体内少数载流子寿命测定光电导衰减法 |
| 7. | A model of the minority carrier lifetime damage constant is presented . the model is proved to be reasonable by good match with experimental data
结合具体的试验条件，证明了所得出的电子辐照4h - sic少子寿命损伤系数的模型是合理的。 |
| 8. | In the third one we investigated the measure of minority carrier lifetime in silicon solar cells by the photo - induced open - circuit voltage decay ( ocvd )
该部分研究对工业化生产具有参考价值。第三部分研究了采用开路电压法测量晶体硅太阳电池的少子寿命。 |
| 9. | Generally the minority carriers accumulated by the cell are generated either directly from the p - n junction or the distance between the generated minority carriers and the junction is less than the diffusion length of the minority carriers
通常的太阳电池收集的少数载流子要么是产生于p - n结,要么是少数载流子距离结的距离必须小于其扩散长度。 |
| 10. | In this design , the double graded doping solar cell accumulates the minority carriers with the drift field , which is located at the whole graded space . this means that the accumulation of minority carriers doesn ’ t depend on the above conditions
采用与众不同的通过在p区和n区都采用梯度掺杂这样一个所谓双梯度掺杂,在整个有源层获得高达104v / cm的漂移电场。 |
